BSO615NG

Overview

The UMW BSO615NG is a dual N-channel enhancement mode MOSFET in an SOP-8 package. It features a 60 V drain-source voltage rating and supports up to 7 A continuous drain current at 25 °C case temperature. The device exhibits low on-state resistance, with maximum values of 40 mΩ at VGS = 10 V and 55 mΩ at VGS = 4.5 V. Key dynamic parameters include a total gate charge of 18 nC and a junction-to-ambient thermal resistance of 110 °C/W. Operating temperatures range from -55 °C to +175 °C.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact surface-mount package.
• Enhanced thermal performance via exposed drain pad design for efficient heat dissipation to the PCB.
• Robust avalanche capability supporting single pulse avalanche energy ratings for inductive load protection.

Applications

• High-side and low-side power switching circuits
• DC-DC converter output stages
• Motor driver bridge configurations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel quantities. Ensure that the requested variant matches the required SOP-8 pinout and marking code. Cross-reference the datasheet revision date to confirm parameter validity before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring dual channel isolation within a limited footprint. Evaluate the RDS(on) requirements against the intended gate drive voltage, noting the increase at lower VGS levels. Confirm that the thermal management strategy accounts for the specified junction-to-ambient resistance under expected duty cycles.

Part Context

This part belongs to the UMW SIPMOS series of power MOSFETs designed for general-purpose switching applications. It utilizes trench technology to achieve low on-resistance and fast switching speeds. The dual configuration allows for cost-effective implementation of half-bridge or synchronous rectifier topologies compared to using discrete single devices.

Replacement Considerations

Direct replacements must match the 60 V rating, dual N-channel topology, and SOP-8 package. Verify that substitute parts offer equivalent or superior RDS(on), gate charge, and thermal resistance characteristics to ensure circuit compatibility without redesign.

FAQ

What is the maximum single pulse avalanche energy (EAS) for this device?

The maximum single pulse avalanche energy is rated at 16.2 mJ when measured with an inductance of 0.1 mH.

How does the on-state resistance vary with temperature?

The on-state resistance increases positively with junction temperature. Normalized curves show significant rise at higher temperatures, requiring derating of current capacity accordingly.

Is the internal body diode characterized for reverse recovery?

The datasheet provides forward voltage characteristics for the source-drain diode but does not explicitly list reverse recovery charge (Qrr) parameters in the static or dynamic tables.