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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 2.6A 8DSO
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.6A
- Rds On (Max) @ Id, Vgs：150mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：380pF @ 25V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Infineon BSO615NGXUMA1 is a SIPMOS small-signal transistor designed for automotive applications. It features an N-channel configuration with a maximum drain-source voltage of 60 V and a continuous drain current of 2.6 A at 25°C. The device supports a pulsed drain current of 10.4 A and has a maximum power dissipation of 2 W. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a typical gate-source threshold voltage between 1.2 V and 2 V, and a maximum on-resistance of 150 mΩ at 4.5 V. The component is qualified according to AEC-Q101 standards.
Feature Summary
- Qualified for automotive environments in accordance with AEC-Q101 standards
- Halogen-free construction compliant with IEC61249-2-21 specifications
- Lead-free plating ensuring RoHS compliance
Applications
- Automotive electronic systems requiring robust switching capabilities
- General-purpose low-side switching applications
- Load control circuits in vehicle electronics
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and reel specifications. Confirm that the component meets all required automotive qualification standards for your intended application environment. Cross-reference the datasheet revision history to ensure you are utilizing the most current technical parameters and safety warnings provided by the manufacturer.
Selection Notes
Select this component when a 60 V rated N-channel MOSFET is required for automotive-grade reliability. Ensure the thermal management design accommodates the 2 W power dissipation limit and the 35 K/W junction-to-case thermal resistance. Verify that the gate drive voltage aligns with the specified threshold range to achieve the desired on-resistance performance under operating conditions.
Part Context
This part belongs to the BSO series of SIPMOS transistors from Infineon Technologies. These devices are engineered specifically for high-reliability automotive applications. The series offers a balance of low on-resistance and robust switching performance suitable for various load control tasks in modern vehicle architectures.
Replacement Considerations
BSO615N-G
FAQ
Is the BSO615NGXUMA1 halogen-free?
Yes, the component is halogen-free according to IEC61249-2-21.
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (Vds) is 60 V.
Does the device meet automotive qualification standards?
Yes, it is qualified according to AEC-Q101.
