BSP110,115

$0.59

Description：MOSFET N-CH 100V 520MA SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1979c7bd1be7 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSP110,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 520MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP110,115

Description：MOSFET N-CH 100V 520MA SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：520mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：6.25W (Tc)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP110,115

BSP110,115

Single FETs, MOSFETs Overview

The BSP110,115 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia. It utilizes TrenchMOS™ technology and is housed in a SOT223 surface mount package. The device supports a drain-source voltage of 100 V and a continuous drain current of 520 mA at 25 °C. Total power dissipation reaches 6.25 W under the same conditions. The on-state resistance is specified as 10 Ω maximum at VGS = 5 V and ID = 150 mA. Operating junction temperature ranges from -65 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchMOS™ technology for enhanced performance
Features very fast switching capabilities
Logic level compatible for direct interface with digital circuits
Designed for surface mount installation

Single FETs, MOSFETs Applications

Relay driver
High speed line driver
Logic level translator

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code BSP110,115 against the manufacturer's latest documentation to confirm availability and exact specifications. Ensure that the SOT223 package dimensions align with your PCB footprint requirements. Confirm thermal management strategies are adequate for the specified power dissipation limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a logic-level compatible N-channel MOSFET is required for driving relays or high-speed lines. The SOT223 package provides a balance between current handling and thermal performance. Consider the 100 V rating and 520 mA current capability for low-to-medium power switching applications requiring fast response times.

Single FETs, MOSFETs Part Context

The BSP110 belongs to the family of N-channel enhancement mode field-effect transistors produced by Nexperia (formerly Philips Semiconductors). It represents a transition from older VDMOS technologies to more efficient TrenchMOS™ processes. The SOT223 package is a standard plastic surface-mounted option designed for good heat transfer through the collector pad.