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BSP125L6433HTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP125L6433HTMA1
- Description：MOSFET N-CH 600V 120MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP125L6433HTMA1
Single FETs, MOSFETs Overview
The BSP125L6433HTMA1 is an N-channel MOSFET from Infineon Technologies, rated for 600V drain-source voltage and 120mA continuous drain current. It utilizes a PG-SOT223-4-21 surface-mount package. Key electrical characteristics include a minimum forward transconductance of 60 mS and a rise time of 14.4 ns. The device operates within a junction temperature range up to 150°C and is RoHS compliant.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement-mode small-signal MOSFET construction
- High voltage rating suitable for power switching applications
- Surface-mount design for automated assembly
Single FETs, MOSFETs Applications
- General-purpose power switching
- Low-power inverter circuits
- DC-DC converter stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix HTMA1 against official Infineon documentation to confirm the exact tape-and-reel packaging configuration and lot traceability requirements. Ensure compatibility with standard SOT-223 footprint designs during procurement planning.
Single FETs, MOSFETs Selection Notes
Select this component when a 600V blocking capability is required for low-current applications. The PG-SOT223-4-21 package offers thermal performance advantages over smaller packages while maintaining a compact profile for space-constrained PCB layouts.
Single FETs, MOSFETs Part Context
This part belongs to the SIPMOS series of discrete semiconductors. It serves as a robust solution for medium-voltage switching tasks where high reliability and standardized surface-mount integration are prioritized over high-current handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 600V N-channel MOSFETs in the SOT-223 package family. Verify pinout compatibility and thermal resistance specifications before substituting with equivalent parts from other manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
