ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSP126,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 250V 375MA SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP126,115
- Description：MOSFET N-CH 250V 375MA SOT223
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：375mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP126,115
Single FETs, MOSFETs Overview
The BSP126,115 is an N-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia. It is housed in a miniature SOT-223 surface-mount package with four leads. Key electrical parameters include a maximum drain-source voltage of 250 V and a continuous DC drain current of 375 mA. The device features a peak drain current capability of 1.3 A and a total power dissipation rating of 1.5 W at 25 °C ambient temperature. The on-state resistance (RDSon) is specified as a maximum of 5 Ω at a gate-source voltage of 10 V and a drain current of 300 mA.
Single FETs, MOSFETs Feature Summary
- Direct interface compatibility with CMOS and TTL logic families
- High-speed switching performance without secondary breakdown
- Miniature SOT-223 package design for efficient heat transfer
Single FETs, MOSFETs Applications
- Line current interruptor in telephone sets
- Relay drivers
- High-speed line transformer drivers
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage handling up to 250 V combined with moderate current switching capabilities. The SOT-223 package facilitates effective thermal management through the drain tab, making it suitable for designs where space constraints exist but adequate heat dissipation paths can be implemented on the PCB.
Single FETs, MOSFETs Part Context
This part belongs to the Nexperia discrete semiconductor portfolio, specifically within the vertical D-MOS transistor category. It represents a legacy product originally developed under Philips Semiconductors, now maintained by Nexperia for standard industrial and consumer electronic applications requiring reliable N-channel MOSFET solutions.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing should prioritize matching voltage ratings, current capabilities, and package dimensions to ensure functional equivalence.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
