BSP126,135

$0.82

Description：MOSFET N-CH 250V 375MA SOT223
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:46e52e5a1f6d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSP126,135 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 250V 375MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP126,135

Description：MOSFET N-CH 250V 375MA SOT223
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：375mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP126,135

BSP126,135

Single FETs, MOSFETs Overview

The BSP126,135 is an N-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia USA Inc. It features a maximum drain-source voltage of 250 V and a continuous drain current of 375 mA. The device operates with a total power dissipation of 1.5 W at 25 °C ambient temperature. Key electrical characteristics include a gate-source threshold voltage ranging from 0.8 V to 2 V and a drain-source on-state resistance of up to 5 Ω at VGS = 10 V. It utilizes the SOT223 (SC-73) surface-mount package.

Single FETs, MOSFETs Feature Summary

Direct interface compatibility with CMOS and TTL logic families
High-speed switching capability without secondary breakdown
Miniature SOT223 package design for efficient heat transfer

Single FETs, MOSFETs Applications

Line current interruptor in telephone sets
Relay drivers
High-speed line transformer drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging configuration. Confirm that the component meets all required automotive or industrial qualification standards if applicable to the target system. Cross-reference the datasheet revision history to validate parameter consistency before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage N-channel switching with direct logic interfacing. Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance. Ensure the operating drain current remains within the 375 mA limit and verify that the gate drive voltage satisfies the threshold requirements for optimal on-state performance.

Single FETs, MOSFETs Part Context

This part belongs to the BSP126 series of N-channel enhancement mode vertical D-MOS transistors. It is designed as a general-purpose switching device suitable for various electronic circuits. The product specification supersedes earlier data from June 1997, reflecting updated manufacturing standards under the Nexperia brand following the separation from NXP Standard Products.