BSP129E6327

$0.34

Description：MOSFET N-CH 240V 350MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:bb7983c10480 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP129E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 240V 350MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP129E6327

Description：MOSFET N-CH 240V 350MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：240 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id：1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs：5.7 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：108 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP129E6327

BSP129E6327

Single FETs, MOSFETs Overview

The BSP129E6327 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It operates in a normally-on state at zero gate-source voltage, making it suitable for constant current source applications. The device features a PG-SOT223 package and is qualified to AEC-Q101 standards. Key electrical parameters include a drain-source breakdown voltage of 240 V, a continuous drain current of 0.35 A at 25°C, and a maximum power dissipation of 1.8 W. The component supports an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Depletion mode operation providing a normally-on characteristic at zero gate bias
dv/dt rated capability with a specification of 6 kV/µs under defined conditions
Automotive qualification compliant with the AEC-Q101 standard
Threshold voltage sorting available via specific reel indicators

Single FETs, MOSFETs Applications

Constant current sources utilizing the normally-on characteristic
High-frequency switching circuits requiring compact designs
Power infrastructure components within automotive systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and threshold voltage banding. Confirm that the component meets all required environmental and reliability standards for the intended application before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel MOSFET is required for high-voltage or constant current applications. Consider the thermal resistance characteristics and the specific threshold voltage bands available on reels to ensure compatibility with circuit design requirements.

Single FETs, MOSFETs Part Context

The BSP129 belongs to Infineon's SIPMOS small-signal transistor family. This series includes devices in SOT-223 and SOT-23 packages with varying breakdown voltages. These transistors are designed for high-frequency switching and offer robust performance in compact form factors.