BSP129E6327T

Single FETs, MOSFETs Overview

The BSP129E6327T is an N-channel depletion mode SIPMOS small-signal transistor in a PG-SOT223 package. It features a drain-source breakdown voltage of 240 V and a maximum on-state resistance of 6 Ω at VGS=10V. The device supports a continuous drain current of 0.35 A and a pulsed current of 1.4 A, with power dissipation rated at 1.8 W. Key electrical parameters include an input capacitance of 82 pF and a reverse diode dv/dt rating of 6 kV/µs. Gate threshold voltage is sorted into specific bands (J through N) for precise selection.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation suitable for normally-on applications
• High dv/dt capability for the integrated reverse diode
• Gate threshold voltage sorting available via reel labeling
• Qualified according to automotive reliability standards

Single FETs, MOSFETs Applications

• Powertrain control systems
• Automotive lighting circuits
• Solenoid and relay driver interfaces
• Low-side switching for resistive loads

Single FETs, MOSFETs Procurement Notes

Verify the specific gate threshold voltage band required for the application, as the component is supplied in sorted bands indicated by letters on the reel label. Confirm that the PG-SOT223 footprint matches the PCB design. Ensure the depletion mode characteristic aligns with the circuit logic requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel switch is required with high voltage blocking capabilities. The availability of sorted VGS(th) bands allows for tighter tolerance matching in critical analog or switching thresholds. Consider the thermal resistance values relative to the expected ambient temperature and cooling area constraints during the design phase.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for robust performance in demanding environments. The BSP129 specifically targets automotive applications requiring reliable low-side switching with high surge current handling. Its depletion mode nature distinguishes it from standard enhancement-mode MOSFETs used in similar roles.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the N-channel depletion mode specification and PG-SOT223 package. Verify that any alternative component meets the 240 V breakdown voltage and 6 Ω RDS(on) maximum limits. Cross-reference the gate threshold voltage banding options if precise threshold control is necessary for the target circuit.

Single FETs, MOSFETs FAQ

What does the letter code on the reel label indicate?

The letter code indicates the specific gate threshold voltage (VGS(th)) band the transistors belong to, ranging from J to N.

Is the BSP129 an enhancement or depletion mode device?

It is a depletion mode device, meaning it conducts current when the gate-to-source voltage is zero.

What is the maximum dv/dt rating for the internal body diode?

The reverse diode is rated for a dv/dt of 6 kV/µs under specified test conditions.