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BSP129H6906XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 240V 350MA SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP129H6906XTSA1 is an N-channel depletion mode SIPMOS small-signal transistor in a PG-SOT223 package. It features a drain-source breakdown voltage of 240 V, a continuous drain current of 0.35 A at 25°C, and a maximum on-state resistance of 6 Ω at VGS=0V. The device operates within a temperature range of -55°C to +150°C with a power dissipation of 1.8 W. It includes reverse diode dv/dt rating of 6 kV/µs and is available with VGS(th) indicator sorting.
Verify the H6906 suffix indicates VGS(th) band sorting rather than functional changes. Confirm RoHS compliance and Pb-free lead plating status. Ensure the PG-SOT223 package footprint matches design requirements. Check for automotive qualification documentation if used in life-support or critical systems.
Select this component for designs needing a robust N-channel depletion MOSFET with high dv/dt immunity. Consider the 240V breakdown voltage and 0.35A current limits. Evaluate thermal resistance values for PCB layout. Verify that the specific VGS(th) band meets circuit threshold requirements.
Part of Infineon's SIPMOS small-signal transistor family offering depletion mode options. Designed for compact SMD applications with automotive-grade reliability. Provides alternatives to standard enhancement mode devices where normally-on behavior is required.
BSP129H6327XTSA1 (same device without VGS(th) sorting)
It indicates the device is sorted into specific gate threshold voltage (VGS(th)) bands.
Yes, it is qualified according to AEC-Q101 standards.
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