BSP135L6327HTSA1

Description：MOSFET N-CH 600V 120MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:8fa99b0b3bd9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP135L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP135L6327HTSA1

Description：MOSFET N-CH 600V 120MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id：1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs：4.9 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：146 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4-21
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP135L6327HTSA1

BSP135L6327HTSA1

Single FETs, MOSFETs Overview

The BSP135L6327HTSA1 is an N-channel depletion mode MOSFET from the Infineon SIPMOS series. It features a maximum drain-source voltage of 600 V and a continuous drain current of 120 mA at 25°C. The device has a maximum on-resistance of 45 Ω at zero gate-source voltage and a typical gate charge of 3.7 nC. It operates within a temperature range of -55°C to 150°C, dissipates up to 1.8 W, and is housed in a surface-mount SOT-223 package with four pins.

Single FETs, MOSFETs Feature Summary

Depletion mode operation provides normally-on functionality suitable for constant current source applications
High breakdown voltage capability supports high-voltage circuit designs
Automotive qualification ensures reliability under demanding environmental conditions

Single FETs, MOSFETs Applications

Constant current sources
High-voltage switching circuits
Automotive electronic systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and lead-free status. Ensure the component meets AEC-Q101 automotive grade requirements if used in vehicle electronics. Cross-reference the full part number with manufacturer databases to validate current production status and availability before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel configuration is required for high-voltage isolation or constant current regulation. The 600 V rating distinguishes it from standard low-voltage logic-level MOSFETs. Consider the relatively high on-resistance compared to enhancement modes, which impacts power dissipation in continuous conduction scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon SIPMOS family, designed for robust performance in power management applications. The SIPMOS technology integrates optimized cell structures for efficient switching. As a depletion mode device, it differs fundamentally from common enhancement mode transistors by conducting current at zero gate bias.