ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSP171PE6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP171PE6327
- Description：MOSFET P-CH 60V 1.9A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id：2V @ 460µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：460 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP171PE6327
Single FETs, MOSFETs Overview
The BSP171PE6327 is a P-Channel SIPMOS® small-signal transistor in PG-SOT223 packaging. It features an avalanche-rated design with dv/dt capability and logic-level operation. Key electrical parameters include a drain-source breakdown voltage of -60 V, continuous drain current of -1.9 A at 25°C, and maximum on-state resistance of 0.3 Ω at VGS=-10 V. The device supports a power dissipation of 7 W, operates within a temperature range of -55°C to +150°C, and carries AEC-Q101 qualification.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust energy handling
- dv/dt rated for fast switching applications
- Logic level gate drive compatibility
- Pb-free lead plating and RoHS compliant
Single FETs, MOSFETs Applications
- High-side load switching
- Power management circuits
- Automotive electronics systems
Single FETs, MOSFETs Procurement Notes
Verify the specific E6327 ordering suffix against official Infineon documentation to confirm reel quantity and tape specifications. Confirm that the component meets required automotive quality standards via AEC-Q101 certification status. Ensure thermal management designs account for the specified junction-to-ambient resistance values under intended operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring P-Channel enhancement mode MOSFETs with high voltage tolerance. Consider its low on-resistance and logic-level gate threshold for efficient control. Evaluate the package's thermal performance relative to the system's heat dissipation requirements and available copper area for optimal reliability.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS® family of small-signal transistors. It utilizes standard PG-SOT223 surface-mount technology. The product line emphasizes compact design solutions suitable for modern electronic equipment requiring reliable semiconductor switching components.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameter alignment and package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
