BSP295E6327

$0.31

Description：MOSFET N-CH 60V 1.8A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:d880d2ac5f68 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP295E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 1.8A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP295E6327

Description：MOSFET N-CH 60V 1.8A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：368 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP295E6327

BSP295E6327

Single FETs, MOSFETs Overview

The BSP295E6327 is an N-channel enhancement mode MOSFET from Infineon Technologies, packaged in PG-SOT223. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 1.8 A at 25°C. The device has a maximum on-state resistance of 0.3 Ω at VGS=10V and ID=1.8A. It supports a pulsed drain current of 7.2 A and operates within a temperature range of -55°C to +150°C. The component is qualified according to AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode construction
Qualified for automotive applications per AEC-Q101
High reverse diode dv/dt rating

Single FETs, MOSFETs Applications

Automotive power switching circuits
Low-side load switching applications
General purpose power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix E6327 corresponds to the tape and reel packaging configuration containing 1000 pieces per reel as documented in the official datasheet. Confirm that the component meets RoHS compliance and halogen-free requirements specified by IEC61249-2-21 before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with low on-resistance is required for automotive or industrial environments. Ensure the thermal design accommodates the junction-to-soldering point thermal resistance of 15 K/W typical value. Verify that the gate drive voltage aligns with the threshold characteristics for optimal conduction performance.

Single FETs, MOSFETs Part Context

This part belongs to the SIPMOS Small-Signal-Transistor product line from Infineon Technologies. It utilizes silicon planar technology designed for robust performance in surface-mount applications. The PG-SOT223 package provides efficient thermal dissipation capabilities suitable for compact circuit board layouts.