BSP295E6327T

Single FETs, MOSFETs Overview

The BSP295E6327T is an N-channel enhancement mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a PG-SOT223 package and is qualified according to AEC-Q101 standards. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 1.8 A at 25°C, and a maximum gate-source voltage of ±20 V. The device exhibits a typical on-state resistance of 0.3 Ω at VGS=10V and ID=1.8A, with a total gate charge of 14 nC. It supports a reverse diode dV/dt rating of 6 kV/µs and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Integrated high-speed reverse diode capable of handling a dV/dt rating of 6 kV/µs for robust switching performance.
• Automotive-grade qualification compliant with AEC-Q101 standards for reliability in demanding environments.
• Lead-free plating and halogen-free construction ensuring compliance with RoHS directives.

Single FETs, MOSFETs Applications

• High-side and low-side switching applications
• Power management circuits requiring efficient load control
• Automotive electronic systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix E6327 against official Infineon documentation to confirm tape and reel specifications. Ensure that the required packaging quantity aligns with standard reel sizes, typically 1000 pieces per reel for this component type. Confirm that the requested part matches the exact marking code 'BSP295' printed on the device surface to avoid substitution errors during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring an N-channel MOSFET with a 60V breakdown voltage and 1.8A continuous current capability. Consider the thermal resistance characteristics and safe operating area curves for heat dissipation planning. The AEC-Q101 qualification makes it suitable for automotive applications where long-term reliability and environmental stability are critical requirements.

Single FETs, MOSFETs Part Context

This component belongs to the BSP295 series of SIPMOS small-signal transistors from Infineon Technologies. These devices are designed for general-purpose switching applications, offering a balance of low on-resistance and fast switching speeds. The series utilizes advanced silicon planar technology to provide high efficiency and durability in compact surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference documents for verified substitute part numbers. Do not assume compatibility based solely on similar pinouts or voltage ratings without verifying electrical parameter equivalence.