BSP295L6327HTSA1

Single FETs, MOSFETs Overview

The BSP295L6327HTSA1 is an N-channel enhancement mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT223 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 1.8 A at 25°C. The device has a maximum on-state resistance of 0.3 Ω at VGS=10V and 0.5 Ω at VGS=4.5V. Gate threshold voltage ranges from 0.8 V to 1.8 V, with a total gate charge of 17 nC max. It supports a reverse diode dv/dt rating of 6 kV/µs and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Enhancement mode N-channel construction for standard switching applications
• High reverse diode dv/dt capability rated at 6 kV/µs
• Qualified according to AEC-Q101 standards for automotive reliability
• Lead-free plating and halogen-free packaging compliant with IEC61249-2-21

Single FETs, MOSFETs Applications

• Automotive power management circuits
• General-purpose low-side switching
• Load control applications requiring high dv/dt robustness

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327 corresponds to the required tape and reel quantity of 1000 pieces per reel as documented in the datasheet. Confirm that the PG-SOT223 package variant matches your PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if mandated by your assembly process. Cross-reference the AEC-Q101 qualification status against your specific automotive grade requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with 1.8 A continuous current capability is required in a compact surface-mount package. Consider the 0.3 Ω RDS(on) for efficiency at higher gate drive voltages. The high dv/dt rating makes it suitable for fast-switching environments where parasitic turn-on must be minimized. Verify thermal dissipation needs against the 1.8 W power rating at 25°C ambient.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient power switching in space-constrained designs. The BSP295 variant specifically targets applications needing moderate voltage blocking with high current density in the SOT-223 form factor. It complements other devices in the lineup offering different voltage or current ratings for broader system integration.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate alternative N-channel MOSFETs with similar 60 V, 1.8 A, and PG-SOT223 specifications. Ensure any replacement matches the RDS(on), gate charge, and thermal characteristics to maintain circuit performance.

Single FETs, MOSFETs FAQ

What is the maximum reverse diode dv/dt rating?

The BSP295L6327HTSA1 supports a reverse diode dv/dt rating of 6 kV/µs under specified test conditions.

Is this component qualified for automotive applications?

Yes, the BSP295 is qualified according to the AEC-Q101 standard.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(th)) ranges from a minimum of 0.8 V to a maximum of 1.8 V at ID=400µA.