BSP296 E6433

Description：MOSFET N-CH 100V 1.1A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:0db1112716c1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP296 E6433 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.1A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP296 E6433

Description：MOSFET N-CH 100V 1.1A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：700mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：364 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.79W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP296 E6433

BSP296 E6433

Single FETs, MOSFETs Overview

The BSP296 E6433 is a small-signal N-channel enhancement-mode MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and features a logic-level gate threshold voltage ranging from 0.8 V to 2.0 V. The device is housed in a SOT-223 package with four pins, configured as Gate, Drain, Source, and Drain. Key electrical parameters include a drain-source breakdown voltage of 100 V, a continuous drain current of 1 A at 42 °C, and a maximum power dissipation of 1.8 W at 25 °C. The typical on-state resistance is 0.8 Ω at VGS = 10 V and ID = 1 A.

Single FETs, MOSFETs Feature Summary

Logic-level operation enables direct drive from standard logic interfaces.
High-voltage capability supports applications requiring up to 100 V blocking.
Integrated reverse diode provides inherent body diode conduction path.

Single FETs, MOSFETs Applications

Low-side switching circuits
Power distribution units
General-purpose signal switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67000-S067 E6327 against the required tape and reel specifications. Confirm that the component meets the necessary environmental standards for the intended operating temperature range of -55 °C to +150 °C. Ensure compatibility with the SOT-223 footprint during PCB layout validation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a robust N-channel switch with moderate current handling capabilities. The low gate threshold voltage simplifies driver circuit design compared to standard threshold devices. Consider the thermal resistance characteristics when determining heat sinking requirements for high-duty-cycle operations.

Single FETs, MOSFETs Part Context

This part belongs to the BSP296 series of SIPMOS small-signal transistors. It is designed for general-purpose switching applications where size and cost efficiency are critical. The SOT-223 package offers a balance between power handling and compact surface-mount integration.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative N-channel MOSFETs in SOT-223 packages with similar VDS and ID ratings. Verify pinout compatibility and thermal performance metrics before substitution.