BSP296NH6327XTSA1

$0.37

Description：MOSFET N-CH 100V 1.2A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a761999f4414 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP296NH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.2A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP296NH6327XTSA1

Description：MOSFET N-CH 100V 1.2A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：600mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id：1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：152.7 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP296NH6327XTSA1

BSP296NH6327XTSA1

Single FETs, MOSFETs Overview

The BSP296N is an N-channel OptiMOS small-signal transistor in a PG-SOT223 package. It features logic-level operation rated at 4.5V with a maximum drain-source voltage of 100V and continuous drain current of 1.2A at 25°C. The device supports pulsed currents up to 4.6A and includes avalanche rating capabilities. Key electrical parameters include a gate threshold voltage ranging from 0.8V to 1.8V and on-state resistance values dependent on gate drive conditions.

Single FETs, MOSFETs Feature Summary

Enhancement mode N-channel construction optimized for low-voltage logic control applications
Avalanche-rated design capability for handling inductive load energy dissipation
Qualified according to AEC Q101 standards for automotive reliability requirements

Single FETs, MOSFETs Applications

Automotive electronic systems requiring AEC Q101 qualified components
Logic-level switching circuits driven by 4.5V or higher control signals
Inductive load management utilizing avalanche energy absorption

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327 corresponds to the tape and reel configuration containing 1000 pieces per reel. Confirm that the component meets halogen-free requirements according to IEC61249-2-21 standards. Ensure compatibility with RoHS compliance directives prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a small-signal N-channel MOSFET with integrated avalanche protection is required. The SOT223 package provides suitable thermal performance for moderate power dissipation needs. Consider the 4.5V logic level rating to ensure proper gate drive compatibility with standard microcontroller outputs.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family of small-signal transistors designed for efficient switching applications. The BSP296N specifically targets automotive environments due to its AEC Q101 qualification. It serves as a compact solution for low-current switching tasks within constrained board spaces.