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BSP298L6327HUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 400V 500MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP298L6327HUSA1
- Description：MOSFET N-CH 400V 500MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP298L6327HUSA1
Single FETs, MOSFETs Overview
The BSP298L6327HUSA1 is an N-channel enhancement mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT223-4 surface-mount package. It features a maximum drain-source voltage of 400 V and a continuous drain current of 0.5 A at 26 °C. The device has a typical on-state resistance of 2.2 Ω and a gate threshold voltage ranging from 2.1 V to 4.0 V. It supports a single-pulse avalanche energy of 130 mJ and operates within a junction temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient conditions
- Enhancement mode N-channel configuration with low gate threshold voltage
- Pb-free lead plating compliant with RoHS standards
- Qualified according to AEC Q101 automotive reliability standards
Single FETs, MOSFETs Applications
- High-voltage switching circuits
- Power management modules
- Automotive electronic control units
Single FETs, MOSFETs Procurement Notes
Verify the component authenticity by matching the marking code 'BSP298' against official datasheet specifications. Confirm the ordering suffix L6327 corresponds to tape and reel packaging as documented. Ensure the part meets RoHS compliance requirements and AEC Q101 qualification status before integration into production lines.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high breakdown voltage up to 400 V with moderate current handling capabilities. Consider the thermal resistance characteristics and power dissipation limits when designing heat sinks or PCB copper areas. Evaluate the gate threshold voltage range to ensure compatibility with available drive voltages.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS small-signal transistor family, designed for general-purpose switching applications. The SIPMOS technology integrates optimized cell structures to achieve reliable performance in compact surface-mount packages suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 400 V rating, 0.5 A current capacity, and SOT-223-4 package outline. Verify equivalent avalanche energy ratings and thermal resistance values to maintain circuit safety margins.
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