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BSP300 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 800V 190MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP300 E6327
- Description：MOSFET N-CH 800V 190MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP300 E6327
Single FETs, MOSFETs Overview
The BSP300 E6327 is an N-channel enhancement-mode SIPMOS small-signal transistor rated for 800 V drain-source breakdown voltage and 190 mA continuous drain current. It features a maximum on-state resistance of 20 Ω at 10 V gate drive and supports avalanche energy ratings up to 36 mJ. The device operates within a junction temperature range of -55 °C to +150 °C, dissipating up to 1.8 W at 25 °C ambient temperature. Packaged in PG-SOT223-4 with pin configuration Gate-Drain-Source-Drain, it meets AEC-Q101 qualification standards.
Single FETs, MOSFETs Feature Summary
- Avalanche-rated capability for robust operation under transient overvoltage conditions
- High-voltage insulation suitable for demanding power switching applications
- Enhancement mode operation with defined threshold voltage ranges
Single FETs, MOSFETs Applications
- High-voltage switching circuits
- Power supply output stages
- Industrial control systems requiring avalanche resilience
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific E6327 tape and reel packaging designation matches project requirements. Ensure compliance with RoHS directives and Pb-free lead plating specifications as documented in the datasheet. Validate that the PG-SOT223-4 package footprint aligns with PCB layout constraints before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation and avalanche ruggedness are primary design drivers. The 800 V rating accommodates significant voltage spikes without external protection. Consider the thermal resistance characteristics for heat dissipation planning in enclosed environments. Verify gate drive voltage compatibility with the specified threshold range to ensure reliable turn-on performance across the operating temperature spectrum.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family of small-signal transistors designed for general-purpose power switching. The E6327 suffix indicates specific tape and reel packaging for automated surface mount assembly. As an N-channel device, it complements P-channel counterparts in bridge configurations. The technology leverages silicon planar MOS structures for consistent electrical performance.
Single FETs, MOSFETs Replacement Considerations
BSP300L6327HUSA1
Single FETs, MOSFETs FAQ
What is the maximum single-pulse avalanche energy rating?
The BSP300 E6327 can withstand a single-pulse avalanche energy of 36 mJ under specified test conditions of ID = 0.8 A and VDD = 50 V.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage decreases as junction temperature increases, ranging from approximately 2 V to 4 V at 25 °C, with negative temperature coefficient behavior observed up to 150 °C.
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