BSP300H6327XUSA1

$0.99

Description：MOSFET N-CH 800V 190MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f8363ee86ffc Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP300H6327XUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 800V 190MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP300H6327XUSA1

Description：MOSFET N-CH 800V 190MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP300H6327XUSA1

BSP300H6327XUSA1

Single FETs, MOSFETs Overview

The BSP300H6327XUSA1 is an N-channel enhancement mode MOSFET from the Infineon SIPMOS series. It features a maximum drain-source voltage of 800 V and a continuous drain current of 0.19 A at 25 °C. The device has a maximum on-state resistance of 20 Ω at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C, with a power dissipation rating of 1.8 W. The component is housed in a PG-SOT223-4 package.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust operation under transient energy conditions
Qualified according to AEC-Q101 automotive standards
RoHS compliant and halogen-free construction

Single FETs, MOSFETs Applications

High-voltage switching circuits
Automotive electronic systems
General-purpose small-signal transistor applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure that the requested part number matches the exact electrical characteristics and package type required for the design. Cross-reference the manufacturer's datasheet revision to confirm compliance with current environmental standards like RoHS and halogen-free requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage blocking capability up to 800 V is required in a compact surface-mount form factor. Consider the thermal resistance and power dissipation limits for the intended operating environment. Verify that the gate threshold voltage range aligns with the available drive voltage levels in the target circuit design.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon SIPMOS family of small-signal transistors. These devices are designed for general-purpose switching applications requiring high voltage ratings. The SIPMOS technology integrates optimized cell structures to achieve reliable performance in automotive and industrial environments while maintaining a small physical footprint.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists or cross-reference tools provided by Infineon for verified substitute part numbers. Do not assume compatibility based solely on package similarity or generic voltage ratings. Verify all critical electrical parameters against the original specification sheet.