ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSP315P-E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.17A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP315P-E6327
- Description：MOSFET P-CH 60V 1.17A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 1.17A, 10V
- Vgs(th) (Max) @ Id：2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 155°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP315P-E6327
Single FETs, MOSFETs Overview
The BSP315P-E6327 is a P-Channel SIPMOS small-signal transistor in SOT-223 packaging. It features a drain-source voltage of -60 V, continuous drain current of -1.17 A, and on-state resistance of 0.8 Ω at -10 V gate drive. The device supports pulsed drain currents up to -4.68 A and single-pulse avalanche energy of 24 mJ. Operating temperature ranges from -55 °C to +150 °C with power dissipation of 1.8 W.
Single FETs, MOSFETs Feature Summary
- Enhancement mode logic level operation for direct interface compatibility
- Avalanche rated capability for robust transient handling
- dv/dt rated reverse diode performance for high-speed switching
Single FETs, MOSFETs Applications
- Logic level switching applications
- High speed switching circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67042-S4004 against the BSP315P-E6327 designation to ensure correct component identification. Confirm package type matches SOT-223 requirements. Check datasheet revision status as the provided document is marked preliminary data. Ensure thermal management aligns with the specified junction-to-soldering point resistance values.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring P-Channel enhancement mode MOSFETs with low on-resistance. Consider the -60 V breakdown voltage and -1.17 A continuous current limits. Evaluate thermal constraints based on the 1.8 W power dissipation rating. Verify gate threshold voltage compatibility with the driving logic levels for reliable switching performance.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes silicon metal-oxide semiconductor field-effect technology. The E6327 suffix indicates a specific tape and reel packaging configuration. The device is designed for general-purpose switching and amplification tasks within electronic circuits.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other P-Channel MOSFETs offering similar -60 V ratings and comparable on-resistance values. Ensure pinout compatibility with SOT-223 packages. Verify that alternative components meet the same avalanche energy and dv/dt specifications if those characteristics are critical to the application design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
