BSP317PH6327XTSA1

$0.84

Description：MOSFET P-CH 250V 430MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4b9289048e62 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP317PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 250V 430MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP317PH6327XTSA1

Description：MOSFET P-CH 250V 430MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id：2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：262 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP317PH6327XTSA1

BSP317PH6327XTSA1

Single FETs, MOSFETs Overview

The BSP317PH6327XTSA1 is a P-channel enhancement-mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT223 surface-mount package. It features a drain-source breakdown voltage of -250 V and a continuous drain current of -0.43 A at 25°C. The device exhibits a maximum on-state resistance of 4 Ω at VGS=-10V and supports a dv/dt rating of 6 kV/µs. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability for efficient control
High dv/dt rating suitable for fast switching applications
Automotive-grade qualification ensuring reliability

Single FETs, MOSFETs Applications

Automotive load switching circuits
Power management modules requiring high voltage isolation
Industrial motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and tape-and-reel specifications. Ensure that the component meets the required AEC-Q101 automotive qualification standards for your intended deployment environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a P-channel switch with a minimum 250 V blocking voltage. Consider the thermal resistance characteristics and the need for adequate PCB copper area for heat dissipation, as power dissipation capabilities are dependent on ambient temperature and mounting conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon SIPMOS family, which utilizes planar trench technology for optimized performance. The BSP317P variant specifically targets applications demanding robust high-voltage handling in a compact surface-mount form factor, distinguishing it from lower-voltage general-purpose transistors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other Infineon P-channel MOSFETs with comparable -250 V ratings and similar pinout configurations, such as those within the same SIPMOS portfolio. Verify electrical parameters and package dimensions before substitution.