BSP317PL6327HTSA1

Single FETs, MOSFETs Overview

The BSP317PL6327HTSA1 is a P-channel SIPMOS small-signal transistor in an SOT-223 package. It features a drain-source breakdown voltage of -250 V and a continuous drain current of -0.43 A at 25°C. The device exhibits a logic-level gate threshold voltage, with typical RDS(on) values of 3 Ω at VGS=-10V and 4 Ω at VGS=-4.5V. Key dynamic characteristics include a reverse diode dv/dt rating of 6 kV/µs and total gate charge (Qg) up to 15.1 nC. Thermal resistance from junction to soldering point is typically 15 K/W.

Single FETs, MOSFETs Feature Summary

• P-channel enhancement mode MOSFET designed for logic level switching applications
• High dv/dt rated internal body diode suitable for fast switching environments
• SIPMOS technology providing robust performance in a compact SOT-223 surface-mount package

Single FETs, MOSFETs Applications

• Low-side or high-side power switching in automotive electronics
• Motor control circuits requiring P-channel drive capabilities
• Power management modules utilizing logic-level interface compatibility

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code BSP317PL6327HTSA1 against official Infineon documentation to ensure correct tape and reel configuration. Confirm that the SOT-223 footprint matches your PCB design constraints. Check for any specific handling requirements related to electrostatic discharge during assembly. Ensure the component meets the required thermal dissipation standards for your specific ambient temperature conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel solution with high voltage tolerance (-250 V) and logic-level gate drive is required. Consider the thermal resistance and power dissipation limits relative to your operating ambient temperature. Evaluate the gate charge and switching speeds against your circuit's frequency requirements. Ensure the SOT-223 package size fits within your available board space constraints.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family of small-signal transistors. These devices integrate advanced silicon planar technology into standard surface-mount packages. The BSP317P variant specifically targets applications needing reliable P-channel switching with enhanced dv/dt capability compared to standard MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-reference part numbers from Infineon or other manufacturers offering identical pinout and electrical specifications. Verify that any substitute maintains the same SOT-223 package dimensions and thermal characteristics. Ensure the replacement device meets or exceeds the -250 V breakdown voltage and -0.43 A current ratings.