BSP318SL6327HTSA1

$0.62

Description：MOSFET N-CH 60V 2.6A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:6c5e5b670649 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP318SL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.6A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP318SL6327HTSA1

Description：MOSFET N-CH 60V 2.6A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id：2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4-21
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP318SL6327HTSA1

BSP318SL6327HTSA1

Single FETs, MOSFETs Overview

The BSP318SL6327HTSA1 is an N-channel enhancement mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a 60 V drain-source voltage rating and a continuous drain current of 2.6 A at 25 °C. The device exhibits a low on-state resistance of 0.09 Ω at VGS = 10 V and 2.6 A, supporting logic-level switching. It is avalanche rated with single-pulse energy capability up to 60 mJ and includes dv/dt rating for reverse diode performance. Qualified under AEC-Q101, it operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robustness against inductive load switching events
Logic level gate drive compatibility for efficient control
dv/dt rated internal body diode for high-speed commutation
Automotive grade qualification ensuring reliability in harsh environments

Single FETs, MOSFETs Applications

Low-side switching in automotive power distribution systems
Inductive load driving applications requiring avalanche resilience
High-frequency switching circuits utilizing logic-level inputs
Power management modules operating under transient thermal stress

Single FETs, MOSFETs Procurement Notes

Verify the component status as the BSP318S series may be subject to end-of-life notifications or obsolescence. Confirm that the L6327 tape and reel packaging aligns with automated assembly requirements. Ensure the AEC-Q101 qualification meets specific automotive project standards before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 60 V N-channel MOSFET with high surge current handling. The low RDS(on) minimizes conduction losses in high-current paths. Consider the thermal resistance characteristics when designing PCB footprints for adequate heat dissipation in confined spaces.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family of small-signal transistors. It utilizes PG-SOT223-4 packaging for surface-mount integration. The device is designed to replace older generation discrete transistors in compact power electronics applications where size and switching speed are critical constraints.