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BSP324H6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 400V 170MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP324H6327XTSA1
- Description：MOSFET N-CH 400V 170MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：5.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：154 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP324H6327XTSA1
Single FETs, MOSFETs Overview
The BSP324H6327XTSA1 is an N-channel enhancement mode power transistor from Infineon's SIPMOS series, housed in a Pb-free SOT-223 package. It features a drain-source breakdown voltage of 400 V and a continuous drain current of 0.17 A at 25°C. The device has a maximum on-state resistance of 25 Ω at VGS=10V and supports a dv/dt rating of 6 kV/µs. It operates within a temperature range of -55°C to +150°C and is qualified according to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- High dv/dt capability rated at 6 kV/µs for robust switching performance
- Logic level gate threshold voltage enabling direct drive from standard logic interfaces
- AEC-Q101 qualification ensuring reliability for automotive applications
Single FETs, MOSFETs Applications
- Automotive load switching circuits
- High-side or low-side driver stages
- General purpose power control modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327 confirms the tape and reel packaging quantity of 1000 pieces per reel. Ensure the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Confirm that the requested part number matches the exact SIPMOS generation and package variant required for your PCB footprint.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-channel MOSFET with low gate charge is required. The 400V rating suits medium-voltage DC applications. Consider the thermal resistance values for heat dissipation planning. The logic-level threshold simplifies gate drive circuit design compared to standard threshold devices.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family, designed for small signal and small power applications. The SIPMOS technology combines planar structure benefits with optimized cell geometry for low on-resistance and high reliability. The BSP324 specifically targets automotive and industrial markets requiring compact surface-mount solutions.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility and thermal characteristics before substituting. Verify that alternative parts meet the 400V breakdown and 6 kV/µs dv/dt requirements. Ensure the replacement package matches the PG-SOT223-4 footprint.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
