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BSP615S2L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 2.8A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP615S2L
- Description：MOSFET N-CH 55V 2.8A SOT223-4
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id：2V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：330 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP615S2L
Single FETs, MOSFETs Overview
The BSP615S2L is an N-channel enhancement mode OptiMOS power transistor in a SOT-223 package. It features a drain-source voltage of 55 V and a continuous drain current of 2.8 A at 25°C. The device has a maximum on-state resistance of 90 mΩ at VGS=10V and 150 mΩ at VGS=4.5V. Gate threshold voltage ranges from 1.2 V to 2 V. Total power dissipation is 1.8 W at 25°C, with a junction-to-soldering point thermal resistance of 23 K/W max.
Single FETs, MOSFETs Feature Summary
- Logic level operation for direct interface with standard digital logic circuits
- Integrated body diode supporting synchronous rectification applications
- OptiMOS technology providing low conduction losses
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Low-side switching in automotive electronics
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the component marking code '2N615L' against the physical device to confirm authenticity. Ensure the ordering code Q67060-S7211 matches the required SOT-223 variant. Confirm RoHS compliance status through official Infineon documentation prior to integration.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage switching applications requiring compact surface-mount packaging. Evaluate thermal constraints carefully as power dissipation drops significantly above 25°C ambient temperature. Verify that the gate drive voltage meets the minimum threshold requirements for full enhancement.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS family of power transistors designed by Infineon Technologies. It utilizes planar trench MOSFET technology to achieve high performance in a small footprint. The SOT-223 package provides efficient thermal transfer to the PCB copper area.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Infineon OptiMOS devices in the SOT-223 package having similar VDS and RDS(on) specifications. Verify pinout compatibility and thermal resistance characteristics before substituting.
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