BSP92PL6327HTSA1

Description：MOSFET P-CH 250V 260MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:de22b4db7154 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP92PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 250V 260MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP92PL6327HTSA1

Description：MOSFET P-CH 250V 260MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id：2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs：5.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：104 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4-21
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP92PL6327HTSA1

BSP92PL6327HTSA1

Single FETs, MOSFETs Overview

The BSP92PL6327HTSA1 is a P-Channel enhancement mode GaN field-effect transistor manufactured by Infineon Technologies. It utilizes silicon carbide (SiC) technology and is housed in a PG-SOT223-4-21 surface-mount package. The device supports a drain-source voltage of 250 V and a continuous drain current of 260 mA at ambient temperature. Power dissipation is rated at 1.8 W, with an operating junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Utilizes Gallium Nitride on Silicon Carbide technology for enhanced performance
Designed for high-voltage single-ended switching applications
Automotive qualified under AEC-Q101 standards

Single FETs, MOSFETs Applications

High-side power switching circuits
Automotive load drivers
General-purpose power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm component availability status as manufacturing transitions may affect supply continuity. Ensure compatibility with existing PCB footprints designated for the PG-SOT223-4-21 package before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage handling with a P-Channel configuration. The GaN-on-SiC construction offers distinct thermal and electrical characteristics compared to standard silicon MOSFETs. Verify that the 260 mA continuous current rating meets the specific load requirements of the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the BSP92P series of P-Channel GaN FETs. It serves as a specialized discrete semiconductor solution for automotive and industrial environments where high breakdown voltage and reliable switching are critical. The component integrates advanced wide-bandgap material properties into a standard surface-mount form factor.