BSR13

Single Bipolar Transistors Overview

The BSR13 is an NPN general-purpose amplifier transistor manufactured by onsemi, sourced from Fairchild Semiconductor process technology. It features a collector-emitter voltage (VCEO) of 30 V and a continuous collector current (IC) rating of 0.5 A. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 35 to 300 depending on the collector current level, and a transition frequency (fT) of 250 MHz at 20 mA. Thermal dissipation is rated at 350 mW with a thermal resistance of 357 °C/W.

Single Bipolar Transistors Feature Summary

• NPN bipolar junction transistor designed for general-purpose amplification applications
• High DC current gain capability across multiple operating current levels
• Suitable for high-frequency signal processing with defined transition frequency

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring moderate current handling
• Signal processing stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the datasheet indicates sourcing from Fairchild Semiconductor process technology under the onsemi brand. Confirm the specific revision status and production lifecycle stage before integration into designs. Ensure compliance with RoHS directives and REACH regulations applicable to your region. Cross-reference pinout configurations against the SOT-23B package dimensions provided in the official documentation.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with a 30 V collector-emitter breakdown voltage and 0.5 A continuous current capacity is required. Consider the hFE range of 35 to 300 for biasing calculations in amplifier designs. Evaluate the thermal resistance of 357 °C/W for heat dissipation requirements in compact SOT-23B packages. Verify that the operating temperature range of -55°C to +150°C meets environmental constraints.

Single Bipolar Transistors Part Context

The BSR13 belongs to the family of small-signal NPN transistors intended for low-power amplification and switching tasks. Manufactured using established semiconductor processes, it offers reliable performance in standard electronic assemblies. The device is housed in a surface-mount SOT-23B package, facilitating automated placement and space-constrained PCB layouts.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists or manufacturer substitution guides for verified equivalent part numbers. Do not assume functional compatibility based solely on package similarity or generic specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BSR13?

The maximum collector-emitter voltage (VCEO) is 30 V.

What is the DC current gain range of the BSR13?

The DC current gain (hFE) ranges from 35 to 300, depending on the collector current test conditions.

What package type does the BSR13 use?

The BSR13 is available in the SOT-23B surface-mount package.