BSR302NL6327HTSA1

$0.38

Description：MOSFET N-CH 30V 3.7A SC59
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:b249569e91f2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSR302NL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 3.7A SC59. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSR302NL6327HTSA1

Description：MOSFET N-CH 30V 3.7A SC59
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id：2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SC59-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSR302NL6327HTSA1

BSR302NL6327HTSA1

Single FETs, MOSFETs Overview

The BSR302NL6327HTSA1 is an N-channel OptiMOS®2 small-signal MOSFET in a PG-SC-59 (SOT-23) package. It features a drain-source breakdown voltage of 30 V and a continuous drain current of 3.7 A at 25 °C. The device has a maximum on-state resistance of 23 mΩ at VGS=10 V and 36 mΩ at VGS=4.5 V. It supports pulsed drain currents up to 14.7 A, operates within a temperature range of -55 °C to 150 °C, and is avalanche rated with single-pulse energy capability of 30 mJ.

Single FETs, MOSFETs Feature Summary

Optimized for logic-level switching with enhanced performance at 4.5 V gate drive voltages.
Capable of handling high dv/dt rates up to 6 kV/µs during reverse diode conduction.
Rated for avalanche energy absorption to withstand inductive load switching events.

Single FETs, MOSFETs Applications

Low-side switching in automotive power distribution systems
High-frequency DC-DC converter output stages
Motor control circuits requiring fast transient response

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L6327 against official Infineon documentation to confirm reel quantity and lead-free status. Ensure the component meets AEC-Q101 qualification requirements for your target application environment before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a low RDS(on) value is required alongside robust avalanche ruggedness. The SOT-23 footprint compatibility allows for direct replacement in space-constrained designs without altering the PCB layout. Consider the thermal resistance characteristics for heat dissipation planning.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS®2 family of small-signal transistors designed by Infineon Technologies. These devices utilize silicon planar gate technology to achieve low on-resistance and fast switching speeds within compact surface-mount packages suitable for automated assembly processes.