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Product Detailed Parameters
- Description：JFET CHOPPER TRANSISTOR
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：8 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：28pF @ 0V
- Resistance - RDS(On)：60 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BSR58LT1 is a P-channel depletion-mode Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for low-noise and chopper applications, featuring a single channel configuration housed in a compact SOT-23 surface-mount package with three pins. The device operates within a drain-source voltage range of up to 30V and supports continuous drain currents typically rated around 10mA. Key electrical characteristics include a maximum gate-source cutoff voltage of -0.5V and a minimum forward transconductance of 1mS at specified bias conditions. The component functions reliably across an extended temperature range from -55°C to +150°C junction temperature, ensuring stability in demanding electronic environments.
Feature Summary
- P-channel depletion-mode operation suitable for analog switching and amplification
- Low noise performance optimized for precision signal processing
- Compact SOT-23 surface-mount packaging for space-constrained designs
Applications
- Low-noise amplifier circuits
- Analog signal switching
- Chopper stabilization circuits
Procurement Notes
Verify the specific ordering suffix and tape-and-reel specifications against the official datasheet before procurement. Confirm that the supplier provides traceable documentation matching the manufacturer's part identification. Ensure compliance with RoHS directives as indicated in the product specifications. Cross-reference the pinout diagram with your PCB layout to prevent installation errors during assembly.
Selection Notes
Select this component when a P-channel depletion-mode JFET is required for low-noise analog applications. Consider the SOT-23 package constraints regarding thermal dissipation and physical footprint. Evaluate the transconductance and leakage current parameters against your circuit's sensitivity requirements. Ensure the operating voltage does not exceed the 30V drain-source rating under all transient conditions.
Part Context
The BSR58LT1 belongs to the BSR series of JFETs from onsemi, which are engineered for high-performance analog applications. This series includes complementary N-channel variants such as the BSR57LT1. These devices are commonly utilized in instrumentation amplifiers and precision rectifiers where low input bias current and minimal noise figure are critical design parameters.
Replacement Considerations
Direct replacements may include the BSR57LT1 for N-channel equivalents or other P-channel depletion JFETs in SOT-23 packages. Verify pin compatibility and electrical parameters such as Vgs(off) and Idss before substitution. Consult the manufacturer's guide for cross-reference information to ensure functional equivalence in sensitive analog circuits.
