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The BSR58LT1G is an N-channel JFET manufactured by onsemi, housed in a SOT-23-3 surface-mount package. It features a maximum drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 10 mA. The device has a power dissipation rating of 350 mW and operates within a temperature range of -55°C to +150°C.
Verify the component authenticity against official onsemi documentation. Confirm the part number matches the specific suffix requirements for your application. Ensure that the sourcing channel provides valid traceability records. Check for any obsolescence notices or lifecycle changes before finalizing procurement decisions.
Select this component when a small-form-factor N-channel JFET with moderate voltage ratings is required. Consider the 40 V breakdown limit and 10 mA current capacity against circuit demands. Evaluate thermal constraints given the 350 mW dissipation rating in the SOT-23-3 package.
This component belongs to the family of discrete JFETs offered by onsemi. It serves as a specialized semiconductor device for analog signal processing applications where high input impedance and low noise characteristics are prioritized over high-power handling capabilities.