BSR58LT1G

BSR58LT1G

  • Description:JFET N-CH 40V SOT23-3
  • Series:-

SKU:87610942a5ab Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 40V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):8 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:800 mV @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):60 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BSR58LT1G

Overview

The BSR58LT1G is an N-channel JFET manufactured by onsemi, housed in a SOT-23-3 surface-mount package. It features a maximum drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 10 mA. The device has a power dissipation rating of 350 mW and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • N-channel junction field-effect transistor configuration
  • Surface-mount SOT-23-3 packaging for compact integration

Applications

  • High-impedance input stages
  • Analog switching circuits
  • Low-noise preamplifiers

Procurement Notes

Verify the component authenticity against official onsemi documentation. Confirm the part number matches the specific suffix requirements for your application. Ensure that the sourcing channel provides valid traceability records. Check for any obsolescence notices or lifecycle changes before finalizing procurement decisions.

Selection Notes

Select this component when a small-form-factor N-channel JFET with moderate voltage ratings is required. Consider the 40 V breakdown limit and 10 mA current capacity against circuit demands. Evaluate thermal constraints given the 350 mW dissipation rating in the SOT-23-3 package.

Part Context

This component belongs to the family of discrete JFETs offered by onsemi. It serves as a specialized semiconductor device for analog signal processing applications where high input impedance and low noise characteristics are prioritized over high-power handling capabilities.

BSR58LT1GBSR58LT1G

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