BSR92PH6327XTSA1

Single FETs, MOSFETs Overview

The BSR92PH6327XTSA1 is a single P-channel MOSFET manufactured by Infineon Technologies using SIPMOS technology. It features a drain-source voltage rating of -250V and a continuous drain current of -110mA. The device has a power dissipation capacity of 0.5W and utilizes a unipolar structure.

Single FETs, MOSFETs Feature Summary

• Utilizes Infineon SIPMOS technology for robust performance
• High voltage capability with -250V drain-source rating
• Unipolar P-channel configuration

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package type and pinout configuration against the official datasheet before integration, as visual identification alone may be insufficient. Confirm that the -250V rating aligns with the target circuit's maximum voltage stress requirements to ensure reliable operation under all conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage switching in a compact form factor. The -110mA current limit suggests suitability for low-power signal control or load switching where higher currents are not required. Ensure thermal management supports the 0.5W dissipation limit.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's discrete transistor portfolio, specifically within the P-MOSFET category. It represents a specialized solution for high-voltage small-signal applications, distinguishing itself from standard low-voltage logic-level MOSFETs through its enhanced breakdown voltage capabilities.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Infineon BSR series parts for similar voltage ratings. Verify compatibility with existing PCB footprints if substituting with alternative manufacturers' components offering comparable -250V specifications.