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BSS119NH7796 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SMALL SIGNAL N-CHANNEL MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS119NH7796
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20.9 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23-3-5
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS119NH7796
Single FETs, MOSFETs Overview
The BSS119NH7796 is a small-signal N-channel MOSFET manufactured by Infineon Technologies. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 190 mA at ambient temperature. The device has a maximum power dissipation of 500 mW and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate-source voltage limit of ±20 V, a maximum on-resistance of 6 Ohms at 10 V gate drive, and a typical gate charge of 0.6 nC. It is housed in a PG-SOT23-3-5 surface-mount package.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology for optimized performance
- AEC-Q101 qualified for automotive applications
- Single N-channel enhancement mode configuration
Single FETs, MOSFETs Applications
- Automotive low-side switching
- General-purpose signal switching
- Load control in electronic circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix NH7796 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with AEC-Q101 requirements if used in automotive contexts. Cross-reference datasheet revisions to validate thermal and electrical limits before integration.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 100 V blocking capability with low current handling. Consider the 6 Ohm on-resistance for efficiency calculations. Verify that the SOT-23-3 footprint matches the PCB design constraints and that the thermal management supports 500 mW dissipation.
Single FETs, MOSFETs Part Context
This part belongs to the BSS119 series of small-signal MOSFETs from Infineon. It is designed for general-purpose switching tasks where compact size and reliable performance are required. The OptiMOS technology provides a balance between conduction losses and switching speed.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the BSS119 family or other manufacturers offering identical 100 V, 190 mA N-channel MOSFETs in SOT-23 packages. Verify pinout compatibility and electrical parameter equivalence before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
