BSS123-7

$0.48

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a879dc3fb195 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

BSS123-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123-7

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123-7

BSS123-7

Single FETs, MOSFETs Overview

The BSS123-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes advanced trench technology to minimize on-state resistance while providing rugged and fast switching performance. The device features a drain-source voltage rating of 100V, a continuous drain current of 0.17A at +25°C, and a maximum static drain-source on-resistance of 6.0Ω at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is housed in a surface-mount SOT23 package.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for minimized on-state resistance
Fast switching speed with low input capacitance
Low gate threshold voltage and leakage characteristics
Qualified to JEDEC standards for high reliability

Single FETs, MOSFETs Applications

Small servo motor controls
Power MOSFET gate drivers
General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it dictates packaging quantity and carrier type. Confirm that the component meets RoHS compliance requirements and halogen-free specifications if mandated by your design constraints. Ensure the selected variant aligns with the required thermal and electrical ratings for your intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, low-current applications requiring reliable switching performance. Consider the SOT23 package dimensions for space-constrained designs. Evaluate the thermal resistance and power dissipation limits relative to your operating conditions. Verify compatibility with standard surface-mount assembly processes and soldering profiles.

Single FETs, MOSFETs Part Context

This part belongs to the BSS123 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed for general-purpose switching tasks where compact size and efficient operation are prioritized. It represents a standard solution for driving small loads or acting as a buffer in digital logic circuits.

Single FETs, MOSFETs Replacement Considerations

An automotive-compliant version is available under the separate datasheet designation BSS123Q. Verify pinout compatibility and electrical parameter overlaps before substituting with other manufacturers' equivalents.