Single FETs, MOSFETs BSS123-G product image

BSS123-G

$0.32
  • Description:FET 100V 6.0 MOHM SOT23
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:778a562b3149 Category: Brand:

  
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BSS123-G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is FET 100V 6.0 MOHM SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123-G

  • Description:FET 100V 6.0 MOHM SOT23
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 34µA
  • Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:73 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123-G

BSS123-G

Single FETs, MOSFETs Overview

The BSS123-G is an N-channel enhancement-mode MOSFET from onsemi’s PowerTrench series, housed in a surface-mount SOT-23 package. It features a maximum drain-source voltage of 100 V and a continuous drain current of 170 mA. The device exhibits a maximum on-resistance of 6 Ω at VGS=10V and a typical gate charge of 1.8 nC. Operating within a temperature range of -55°C to +150°C, it dissipates up to 360 mW. Key electrical parameters include a threshold voltage of 1.6 V and a forward transconductance minimum of 80 mS.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary high-density DMOS technology for low on-resistance and reliable switching performance.
  • Designed as a logic-level device suitable for low-voltage and low-current applications.
  • Complies with RoHS standards and is manufactured using lead-free processes.

Single FETs, MOSFETs Applications

  • Load switching in portable electronic devices
  • Battery protection circuits
  • Small servo motor control systems
  • Gate drive stages for power MOSFETs

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging configurations. Confirm compliance requirements such as RoHS status directly with manufacturer documentation. Ensure the ordering code matches the required tape-and-reel or cut-tape specifications for your assembly process. Cross-reference pinout definitions to prevent installation errors during PCB design.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact N-channel switching with moderate voltage blocking capabilities. Evaluate thermal management needs based on the 360 mW power dissipation limit in the SOT-23 package. Consider the 1.6 V threshold voltage for compatibility with standard logic levels. Verify that the 170 mA current rating meets the peak load requirements of the target circuit without exceeding safe operating area limits.

Single FETs, MOSFETs Part Context

This part belongs to onsemi’s PowerTrench family of small-signal MOSFETs. It shares the SOT-23 form factor with variants like BSS123L and BSS123LT1G. The product line emphasizes cost-effective solutions for consumer electronics and industrial control interfaces. Manufacturing utilizes advanced silicon processes to ensure consistent performance across production batches.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include BSS123L and BSS123LT1G. Verify pinout compatibility and electrical parameter overlaps before substitution. Check for equivalent package dimensions and thermal characteristics to ensure mechanical fit.

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