Single FETs, MOSFETs BSS123 product image

BSS123

$0.12
  • Description:100V 150MA 6@10V,120MA 250MW 2.8
  • Series:-
  • Mfr:Shenzhen Slkormicro Semicon Co., Ltd.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cf5dfc69a6e5 Category: Brand:

  
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BSS123 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Shenzhen Slkormicro Semicon Co., Ltd.. Its product description is 100V 150MA 6@10V,120MA 250MW 2.8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123

  • Description:100V 150MA 6@10V,120MA 250MW 2.8
  • Series:-
  • Mfr:Shenzhen Slkormicro Semicon Co., Ltd.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:150mA
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 120mA, 10V
  • Vgs(th) (Max) @ Id:2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):250mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123

BSS123

Single FETs, MOSFETs Overview

The BSS123 is an N-Channel Power MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a Drain-Source Voltage (BVDSS) of 100 V and a continuous Drain Current (IDR) of 150 mA. The device operates with a Gate-Source Voltage (VGS) rating of ±20 V. Electrical characteristics include a maximum Static Drain-Source On-State Resistance (RDS(ON)) of 6 Ω at VGS=10V, a Gate Threshold Voltage (VGS(th)) range of 1.0 V to 2.8 V, and a Total Device Dissipation (PD) of 250 mW at 25°C ambient temperature. The component is housed in a SOT-23 package.

Single FETs, MOSFETs Feature Summary

  • N-Channel enhancement mode construction for switching applications
  • High voltage capability with 100 V drain-source breakdown
  • Compact surface-mount design suitable for space-constrained layouts

Single FETs, MOSFETs Applications

  • Low-side switching circuits
  • Power management modules
  • Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation on the component marking against the official datasheet provided by Shenzhen Slkormicro Semicon Co., Ltd. Ensure the package type matches the required SOT-23 footprint dimensions. Confirm that the electrical ratings meet the system requirements before integration into the final design.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-Channel MOSFET is required in a small form factor. The 100 V rating provides headroom for various supply voltages, while the low input capacitance supports moderate-speed switching. Evaluate thermal constraints carefully due to the limited power dissipation capability in the standard SOT-23 package.

Single FETs, MOSFETs Part Context

This component belongs to the discrete semiconductor category, specifically within the field-effect transistor family. It serves as a fundamental building block for electronic circuits requiring voltage-controlled current switching. The SOT-23 packaging is widely used in consumer electronics and industrial control boards for its compact size and reliability.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists from Shenzhen Slkormicro Semicon Co., Ltd. for verified equivalent part numbers. Generic replacements must match the 100 V BVDSS, SOT-23 package, and N-Channel configuration to ensure functional compatibility.

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