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BSS123_R1_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is SOT-23, MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123_R1_00001
- Description：SOT-23, MOSFET
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123_R1_00001
Single FETs, MOSFETs Overview
The BSS123_R1_00001 is a 100V N-Channel Enhancement Mode MOSFET in an SOT-23 package. It features a continuous drain current of 170 mA and a pulsed drain current of 680 mA. The device provides low on-state resistance, with maximum values of 6Ω at VGS=10V and 10Ω at VGS=4.5V. It includes ESD protection rated at 2kV HBM and operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Advanced Trench Process Technology for enhanced performance
- Integrated ESD protection rated at 2kV Human Body Model
- Optimized specifically for switch load and PWM applications
Single FETs, MOSFETs Applications
- Switch load circuits
- PWM application control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packing type, such as 3K pcs per 7-inch reel or 12K pcs per 13-inch reel. Confirm that the component marking corresponds to A76. Ensure compliance requirements align with EU RoHS 2.0 standards and IEC 61249 green molding compound specifications before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 100V N-channel enhancement mode MOSFET is required for low-current switching tasks. The device is suitable for applications demanding low gate charge and fast switching speeds. Consider the thermal derating characteristics above 25°C and the package-limited maximum current rating during circuit design.
Single FETs, MOSFETs Part Context
This part belongs to Panjit's discrete semiconductor lineup, specifically designed as a surface-mount N-channel MOSFET. It utilizes an advanced trench process technology to achieve low on-resistance within a compact SOT-23 footprint. The device is manufactured using lead-free processes compliant with environmental directives.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for cross-reference compatibility. Verify pinout alignment, voltage ratings, and thermal characteristics against alternative suppliers.
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