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BSS123K-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is BSS FAMILY SOT23 T&R 10K. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123K-13
- Description：BSS FAMILY SOT23 T&R 10K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123K-13
Single FETs, MOSFETs Overview
The BSS123K-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and operates within a -55°C to +150°C junction temperature range. The device provides a maximum on-resistance of 6Ω at VGS=10V and 10Ω at VGS=4.5V, with continuous drain currents of 230mA at 25°C and 184mA at 70°C. Packaged in SOT23, it includes ESD protection and meets RoHS standards.
Single FETs, MOSFETs Feature Summary
- ESD protected gate structure
- Low gate threshold voltage for efficient drive
- Fast switching speed capabilities
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- Small servo motor control
- Power MOSFET gate drivers
- General switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives and quality standards required for the intended deployment environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a high drain-source voltage rating of 100V is required alongside low input capacitance and fast switching performance. Ensure the application circuit can accommodate the specified thermal resistance values and power dissipation limits under steady-state operating conditions to maintain reliability.
Single FETs, MOSFETs Part Context
This part belongs to the BSS123 family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 surface-mount package. The product line is designed to minimize on-state resistance while maintaining superior switching characteristics for power management tasks.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified equivalent part numbers. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility without design modification.
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