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BSS123LT3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123LT3
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123LT3
Single FETs, MOSFETs Overview
The BSS123LT3 is an N-channel enhancement mode Power MOSFET from onsemi's PowerTrench series, housed in a surface-mount SOT-23 (TO-236) package. It features a maximum drain-source voltage of 100 Vdc and a continuous drain current of 0.17 Adc. The device exhibits a static drain-source on-resistance of up to 6.0 Ω at VGS = 10 Vdc and a gate threshold voltage ranging from 0.8 V to 2.8 V. Total device dissipation is rated at 225 mW with a thermal resistance junction-to-ambient of 556 °C/W. Operating temperature spans -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchMOS technology for minimized on-resistance and robust switching performance
- Logic-level compatible design suitable for low-voltage applications
- Compact three-terminal SOT-23 surface mount configuration
Single FETs, MOSFETs Applications
- Load switch circuits
- Battery protection systems
- Small servo motor control
- Power MOSFET gate drivers
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'LT3' against official documentation to confirm the 10,000-unit tape and reel packaging format. Ensure that any alternative part numbers are cross-referenced with manufacturer datasheets to validate pinout compatibility and electrical parameter equivalence before implementation.
Single FETs, MOSFETs Selection Notes
Select this component for low-current switching tasks requiring high voltage isolation within a minimal footprint. Evaluate the thermal constraints carefully due to the high junction-to-ambient resistance. Confirm that the logic level drive requirements align with the specified gate threshold voltage range for reliable operation in the target circuit environment.
Single FETs, MOSFETs Part Context
This device belongs to the BSS123 family of N-channel power MOSFETs manufactured by onsemi. It is designed as a preferred device for general-purpose switching applications. The product line emphasizes cost-effectiveness and reliability for portable electronics and industrial control modules where space efficiency is critical.
Single FETs, MOSFETs Replacement Considerations
Compatible substitutes include the BSS123LT1G and BSS123LT3G variants, which share identical electrical characteristics but differ in lead-free packaging specifications. Verify exact package dimensions and marking codes when sourcing alternatives.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
