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BSS123W-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT323. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123W-7
- Description：MOSFET N-CH 100V 170MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Single FETs, MOSFETs datasheet and documents for BSS123W-7
Single FETs, MOSFETs Overview
The BSS123W-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 170 mA at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 6.0 Ω at VGS = 10 V and 10 Ω at VGS = 4.5 V. Total power dissipation is rated at 200 mW, with a thermal resistance from junction to ambient of 625 °C/W. Operating and storage temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Fast switching speed suitable for high-frequency applications
- High reliability qualification to JEDEC standards
Single FETs, MOSFETs Applications
- Small servo motor controls
- Power MOSFET gate drivers
- Switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7-F' against official documentation to confirm packaging details, as standard suffixes may vary. Confirm RoHS compliance status and environmental declarations directly with the manufacturer's latest datasheet revision before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, low-current applications requiring fast switching performance. Ensure the design accommodates the 200 mW power dissipation limit and the 625 °C/W thermal resistance. Verify that the required gate drive voltage aligns with the specified RDS(ON) characteristics for optimal efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the BSS123W series of N-channel enhancement mode MOSFETs. It utilizes advanced trench technology to minimize on-state resistance while maintaining rugged switching performance. The device is housed in a SOT323 surface-mount package designed for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
An automotive-compliant version is available under the separate part number BSS123WQ. Verify pinout compatibility and electrical parameter alignment when considering alternative manufacturers or packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
