Single FETs, MOSFETs BSS123WQ-7-F product image

BSS123WQ-7-F

$0.24
  • Description:MOSFET N-CH 100V 170MA SOT323
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f2e0b012a3cb Category: Brand:

  
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BSS123WQ-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT323. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123WQ-7-F

  • Description:MOSFET N-CH 100V 170MA SOT323
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-323
  • Package / Case:SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for BSS123WQ-7-F

BSS123WQ-7-F

Single FETs, MOSFETs Overview

The BSS123WQ-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 170 mA at +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 6.0 Ω at VGS = 10 V, with a maximum rating of 10 Ω at VGS = 4.5 V. Total power dissipation is rated at 200 mW, supported by a thermal resistance from junction to ambient of 625 °C/W. The component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Designed for high-efficiency power-management applications through minimized on-state resistance while maintaining superior switching performance.
  • Qualified for automotive applications requiring specific change control, meeting AEC-Q101 standards and PPAP capability in IATF 16949 certified facilities.
  • Constructed using totally lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.

Single FETs, MOSFETs Applications

  • Small servo motor controls
  • Power MOSFET gate drivers
  • Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the SOT323 package and 3000-unit tape and reel carrier configuration. Confirm compliance requirements such as RoHS 3 and 'Green' device status against project specifications. Ensure the selected variant meets the necessary automotive qualification criteria if deployed in regulated environments.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT323 footprint is required for low-voltage, low-current switching tasks. Evaluate the 6.0 Ω RDS(ON) specification against circuit efficiency targets. Consider the 170 mA continuous current limit and 200 mW power dissipation capabilities relative to the expected thermal environment and load requirements.

Single FETs, MOSFETs Part Context

This part belongs to the BSS123WQ series of N-channel enhancement mode MOSFETs. It utilizes advanced trench technology to achieve low on-state resistance and fast switching speeds. The product line is designed to provide rugged and reliable performance suitable for various consumer and industrial electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility.

Single FETs, MOSFETs FAQ

Is the BSS123WQ-7-F qualified for automotive use?

Yes, the BSS123WQ is suitable for automotive applications requiring specific change control. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

What is the maximum operating temperature for this MOSFET?

The maximum junction temperature (TJ) and storage temperature (TSTG) range extends up to +150°C.

BSS123WQ-7-FBSS123WQ-7-F
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