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BSS126 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS126 E6327
- Description：MOSFET N-CH 600V 21MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：2.7V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：2.1 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS126 E6327
Single FETs, MOSFETs Overview
The BSS126 is an N-channel depletion mode MOSFET in a PG-SOT-23 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 0.021 A at 25 °C. The device has a maximum on-state resistance of 700 Ω at VGS=0 V and a gate threshold voltage range of -2.7 V to -1.6 V. Power dissipation is rated at 0.50 W, with an operating temperature range from -55 °C to +150 °C. It includes dv/dt rating capability up to 6 kV/µs.
Single FETs, MOSFETs Feature Summary
- Depletion mode operation providing normally-on functionality
- High dv/dt rating for robust switching performance
- Available with sorted gate threshold voltage bands
Single FETs, MOSFETs Applications
- Constant current sources
- High-frequency switching circuits
- Compact design applications requiring high voltage tolerance
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix (e.g., E6327) against official Infineon documentation to confirm tape and reel specifications. Ensure the required gate threshold voltage band matches the application needs, as reels contain transistors from a single sorted band identified by a letter code on the label.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a normally-on N-channel switch with high voltage blocking capability. Consider the thermal resistance of 250 K/W for ambient cooling requirements. Verify that the low continuous current rating suits the load requirements and that the negative gate threshold voltage aligns with the control logic levels.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes silicon technology and is available in surface-mount SOT-23 packaging. The product line supports various voltage ratings and offers Pb-free lead plating compliant with RoHS standards.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same SIPMOS series or other manufacturers offering N-channel depletion MOSFETs with similar 600 V ratings and SOT-23 packages. Ensure electrical parameters like RDS(on) and VGS(th) are compatible.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
