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BSS127H6327XTSA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 21MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS127H6327XTSA2
- Description：MOSFET N-CH 600V 21MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS127H6327XTSA2
Single FETs, MOSFETs Overview
The BSS127H6327XTSA2 is an n-channel enhancement mode small-signal MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a 600 V drain-source breakdown voltage and a continuous drain current of 21 mA at 25 °C. The device operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 500 mW. Key electrical parameters include a maximum on-state resistance of 500 Ohms at 10 V gate drive and a total gate charge of 1.0 nC. It is housed in a PG-SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Logic level rated for 4.5 V operation
- Rated dv/dt capability for high-speed switching applications
- Qualified according to AEC-Q101 standards
Single FETs, MOSFETs Applications
- Industrial control systems
- Consumer electronics
- Automotive electronics
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327 against official Infineon documentation to confirm tape and reel specifications. Ensure that the component meets all required environmental compliance standards, including RoHS and halogen-free requirements, before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage small-signal N-channel MOSFET with logic-level compatibility is required. Consider its low continuous current rating and high on-resistance characteristics. Verify thermal management needs based on the specified junction-to-ambient thermal resistance and operating temperature limits.
Single FETs, MOSFETs Part Context
This part belongs to the BSS127 series of SIPMOS small-signal transistors. It is designed for general-purpose switching applications requiring high voltage blocking capabilities in a compact surface-mount package. The series is characterized by robust performance in industrial and automotive environments.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. Do not assume functional equivalence with other manufacturers' parts without verifying pinout, voltage ratings, and thermal characteristics.
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