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BSS127S-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 600V 50MA SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS127S-7
- Description：MOSFET N-CH 600V 50MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：160Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.08 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：21.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：610mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS127S-7
Single FETs, MOSFETs Overview
The BSS127S-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes advanced planar technology to deliver high voltage capability and fast switching performance within a compact SOT-23 surface-mount package. The device features a drain-source breakdown voltage of 600V and a maximum continuous drain current of 70mA at +25°C on FR-4 PCBs. Key electrical parameters include a static drain-source on-resistance of 160Ω at VGS=10V, a gate threshold voltage ranging from 3V to 4.5V, and a total gate charge of 1.08nC. It operates across a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Advanced planar MOSFET technology providing excellent high voltage handling and fast switching characteristics.
- High breakdown voltage rating suitable for demanding power applications.
- Low input capacitance and low input/output leakage currents.
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green device construction.
Single FETs, MOSFETs Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental directives relevant to the target market. Ensure design compatibility with the specified thermal resistance values under actual mounting conditions. Review automotive qualification requirements if AEC-Q101 standards are necessary for the intended application environment.
Single FETs, MOSFETs Selection Notes
Select this component for small-signal and level shifting applications requiring high voltage isolation in a minimal footprint. Evaluate the 600V breakdown voltage against peak circuit transients. Consider the 160Ω on-resistance for efficiency calculations at low current levels. Verify that the SOT-23 package thermal dissipation capabilities align with the expected duty cycle and ambient temperature constraints.
Single FETs, MOSFETs Part Context
This part belongs to the BSS127 series of N-channel enhancement mode MOSFETs. It is designed as a general-purpose discrete semiconductor device for signal processing and power control tasks. The product line emphasizes reliability through JEDEC standards qualification and high-reliability manufacturing processes.
Single FETs, MOSFETs Replacement Considerations
BSS127SSN-7
Single FETs, MOSFETs FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (BVDSS) is rated at 600V.
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(TH)) ranges from a minimum of 3V to a maximum of 4.5V at a drain current of 250µA.
Is this component qualified for automotive applications?
Standard parts are not automatically automotive qualified. For AEC-Q101 qualification and PPAP capability, customers must refer to the related automotive grade part with the Q-suffix.
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