BSS131L6327HTSA1

Single FETs, MOSFETs Overview

The BSS131L6327HTSA1 is an N-Channel SIPMOS small-signal transistor in a PG-SOT-23 package. It features a drain-source breakdown voltage of 240 V and a continuous drain current of 0.11 A at 25°C. The device has a maximum on-state resistance of 14 Ω at VGS=10 V and a gate threshold voltage ranging from 0.8 V to 1.8 V. It supports a power dissipation of 0.36 W, operates between -55°C and +150°C, and includes reverse diode dv/dt rating of 6 kV/µs.

Single FETs, MOSFETs Feature Summary

• Logic level enhancement mode operation for direct interface with standard logic circuits.
• High dv/dt capability rated at 6 kV/µs for robust switching performance.
• Qualified according to AEC-Q101 standards for automotive reliability.

Single FETs, MOSFETs Applications

• High-side load switching applications
• General-purpose amplification and switching
• Automotive electronic control units

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm tape and reel packaging details. Ensure the component meets AEC-Q101 qualification requirements if used in automotive contexts. Cross-reference the PG-SOT-23 footprint dimensions during PCB layout to ensure mechanical compatibility.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage signal switching where low gate charge is beneficial. The 240 V breakdown voltage allows use in higher voltage domains compared to standard 100 V MOSFETs. Consider the thermal resistance of 350 K/W for heat management in small footprints. Verify that the 14 Ω maximum RDS(on) meets the circuit's conduction loss requirements.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon BSS131 SIPMOS series, designed as a small-signal N-Channel MOSFET. It utilizes silicon technology and is packaged in the compact PG-SOT-23 form factor. The series is characterized by its logic-level drive capability and high voltage tolerance, suitable for general-purpose discrete semiconductor applications.

Single FETs, MOSFETs Replacement Considerations

Check for BSS131 variants with different suffixes (e.g., XUMA1, XUMA2) which may share identical electrical characteristics but differ in packaging or reel specifications. Confirm pinout compatibility before substitution.

Single FETs, MOSFETs FAQ

What is the maximum reverse diode dv/dt rating?

The reverse diode dv/dt rating is 6 kV/µs under conditions of ID=0.1 A, VDS=192 V, di/dt=200 A/µs, and Tj,max=150°C.

Is this component qualified for automotive applications?

Yes, the BSS131 is qualified according to the AEC-Q101 standard.