BSS138-G

Single FETs, MOSFETs Overview

The onsemi BSS138-G is an N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a 50 V drain-source voltage rating and a continuous drain current of 0.22 A. The device offers low on-state resistance, specified as 3.5 Ω at VGS = 10 V and 6.0 Ω at VGS = 4.5 V. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 0.36 W. The component is housed in a compact SOT-23 surface mount package.

Single FETs, MOSFETs Feature Summary

• High-density cell design for extremely low on-state resistance
• Rugged and reliable switching performance
• Compact industry standard SOT-23 surface mount package
• Pb-free and halogen free construction

Single FETs, MOSFETs Applications

• Small servo motor control
• Power MOSFET gate drivers
• Low voltage, low current switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure compliance with RoHS directives and confirm that the component meets Pb-free and halogen-free requirements as stated in the datasheet. Cross-reference the document number BSS138/D for the most current technical parameters and mechanical case outline information.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low voltage operation and fast switching capabilities. The low gate threshold voltage makes it suitable for logic-level driving applications. Consider the thermal resistance characteristics when designing heat dissipation strategies for the SOT-23 package. Validate performance under specific operating temperatures and duty cycles using the provided safe operating area curves.

Single FETs, MOSFETs Part Context

The BSS138-G belongs to the BSS138 series of N-channel enhancement mode field effect transistors from onsemi. This series utilizes proprietary DMOS technology to achieve high cell density and low on-state resistance. The product is designed for general-purpose switching applications where compact size and reliability are critical factors in the system architecture.

Single FETs, MOSFETs Replacement Considerations

Consult the official datasheet for direct substitute part numbers or cross-reference similar N-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility and package dimensions before implementation.