BSS138-T

Description：MOSFET N-CH 50V 220MA SOT23-3
Series：-
Mfr：onsemi
Package：Bulk

SKU:db38e51b9a72 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BSS138-T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 50V 220MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS138-T

Description：MOSFET N-CH 50V 220MA SOT23-3
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：27 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：EFCP1313-4CC-037
Package / Case：4-XFBGA

Single FETs, MOSFETs datasheet and documents for BSS138-T

BSS138-T

Single FETs, MOSFETs Overview

The onsemi BSS138-T is an N-channel logic level enhancement mode field effect transistor manufactured using high cell density DMOS technology. It provides a drain-source voltage of 50 V and a continuous drain current of 0.22 A. The device features a maximum static drain-source on-resistance of 3.5 Ω at VGS = 10 V and 6.0 Ω at VGS = 4.5 V. It operates within a junction temperature range of -55 to +150 °C with a maximum power dissipation of 0.36 W.

Single FETs, MOSFETs Feature Summary

High density cell design for extremely low RDS(ON)
Rugged and reliable performance
Compact industry standard SOT-23 surface mount package

Single FETs, MOSFETs Applications

Small servo motor control
Power MOSFET gate drivers
Other switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it may indicate variations in reel size or tape width. Confirm that the component meets all required electrical specifications for the intended application environment. Ensure compliance with safety standards and verify suitability for the operating temperature range before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for low voltage, low current applications requiring fast switching performance. Consider the SOT-23 package for space-constrained designs. Evaluate thermal resistance characteristics relative to the board layout to ensure safe operation within the specified power dissipation limits under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the BSS138 series of N-channel enhancement mode field effect transistors. It utilizes ON Semiconductor's proprietary DMOS technology to minimize on-state resistance while maintaining ruggedness. The device is designed specifically for compact surface mount implementations in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative N-channel MOSFETs with similar VDS, ID, and RDS(on) ratings. Verify pinout compatibility and package dimensions (SOT-23). Ensure replacement parts meet the same thermal and electrical requirements for the specific application.