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The BSS138AKDW-TPQ2 is a dual N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes high-density cell design to achieve extremely low on-resistance. The device operates within a drain-source voltage range of 50V and supports a continuous drain current of 0.22A. Key electrical parameters include a maximum gate-source voltage of ±20V, a typical gate threshold voltage of 1.45V at 250µA, and a maximum on-resistance of 2Ω at VGS=10V and ID=0.5A. It features an operating junction temperature range from -55°C to +150°C with a power dissipation rating of 0.35W in the SOT-363 package.
Verify authenticity through authorized MCC distributors or direct channels to ensure full traceability and compliance with quality standards. Confirm the Q2 suffix indicates automotive qualification status as per official documentation. Check datasheet revisions for any updates to mechanical dimensions or electrical characteristics before finalizing procurement specifications.
Select this component for designs requiring dual N-channel logic-level switching in space-constrained environments. Ensure the 50V breakdown voltage and 0.22A current limits align with circuit requirements. Consider the thermal resistance of 357°C/W when evaluating heat dissipation needs in the SOT-363 footprint.
This part belongs to the BSS138 series of small-signal MOSFETs produced by Micro Commercial Components. It serves as a dual-channel variant suitable for general-purpose switching tasks. The product line emphasizes reliability through halogen-free manufacturing and robust ESD protection capabilities.
BSS138AKDW-TP
The maximum Drain-Source Breakdown Voltage (V(BR)DSS) is 50V.
Yes, the device is lead-free finish and RoHS compliant.
The typical Gate-Threshold Voltage (VGS(th)) is 1.45V at a drain current of 250µA.