BSS138AKDW-TPQ2

BSS138AKDW-TPQ2

$0.04
  • Description:MOSFET 2N-CH 50V 0.22A SOT363
  • Series:-

SKU:7cced1a19ad6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.22A SOT363
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:220mA
  • Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:1.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:22.8pF @ 25V
  • Power - Max:350mW
  • Operating Temperature:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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BSS138AKDW-TPQ2

Overview

The BSS138AKDW-TPQ2 is a dual N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes high-density cell design to achieve extremely low on-resistance. The device operates within a drain-source voltage range of 50V and supports a continuous drain current of 0.22A. Key electrical parameters include a maximum gate-source voltage of ±20V, a typical gate threshold voltage of 1.45V at 250µA, and a maximum on-resistance of 2Ω at VGS=10V and ID=0.5A. It features an operating junction temperature range from -55°C to +150°C with a power dissipation rating of 0.35W in the SOT-363 package.

Feature Summary

  • Dual N-channel configuration housed in a compact SOT-363 surface-mount package
  • High-density cell architecture designed for minimized on-resistance
  • ESD protection rated at 1700V
  • Halogen-free green device compliant with UL 94 V-0 flammability standards

Applications

  • Level shifting circuits
  • Load switching applications
  • Power management systems

Procurement Notes

Verify authenticity through authorized MCC distributors or direct channels to ensure full traceability and compliance with quality standards. Confirm the Q2 suffix indicates automotive qualification status as per official documentation. Check datasheet revisions for any updates to mechanical dimensions or electrical characteristics before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring dual N-channel logic-level switching in space-constrained environments. Ensure the 50V breakdown voltage and 0.22A current limits align with circuit requirements. Consider the thermal resistance of 357°C/W when evaluating heat dissipation needs in the SOT-363 footprint.

Part Context

This part belongs to the BSS138 series of small-signal MOSFETs produced by Micro Commercial Components. It serves as a dual-channel variant suitable for general-purpose switching tasks. The product line emphasizes reliability through halogen-free manufacturing and robust ESD protection capabilities.

Replacement Considerations

BSS138AKDW-TP

FAQ

What is the maximum drain-source breakdown voltage?

The maximum Drain-Source Breakdown Voltage (V(BR)DSS) is 50V.

Is the device RoHS compliant?

Yes, the device is lead-free finish and RoHS compliant.

What is the typical gate threshold voltage?

The typical Gate-Threshold Voltage (VGS(th)) is 1.45V at a drain current of 250µA.

BSS138AKDW-TPQ2BSS138AKDW-TPQ2
$0.04
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