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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.32A 6DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
- Rds On (Max) @ Id, Vgs：2.9Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：315pC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：9pF @ 30V
- Power - Max：420mW (Ta), 5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：DFN1412-6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia BSS138AKRA-QZ is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an ultra-small DFN1412-6 (SOT1268) leadless surface-mount package. It features logic-level compatibility and AEC-Q101 qualification for automotive reliability. Key electrical parameters include a drain-source voltage of 60 V, gate-source voltage of ±20 V, and a continuous drain current of 320 mA per transistor at 25 °C. The typical on-state resistance is 2.2 Ω at VGS = 10 V and ID = 100 mA. The device supports a junction temperature range from -55 °C to 150 °C.
Feature Summary
- Logic-level compatible operation
- Very fast switching capability
- Trench MOSFET technology
- Electrostatic discharge protection
- AEC-Q101 qualified
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary automotive qualification standards if deployed in vehicle systems. Ensure design compliance with absolute maximum ratings to prevent permanent damage. Check the most recent product data sheet for any specification updates before finalizing designs.
Selection Notes
Select this component when space-constrained automotive or industrial designs require dual N-channel MOSFETs. The DFN1412-6 package offers thermal efficiency suitable for high-density layouts. Consider the low threshold voltage for direct logic interface compatibility. Evaluate thermal resistance requirements against the intended PCB footprint and copper area.
Part Context
This part belongs to Nexperia's AEC-Q101 qualified small-signal MOSFET portfolio. It utilizes advanced Trench MOSFET technology to achieve fast switching speeds and low on-resistance. The dual configuration allows for efficient implementation of bridge drivers or independent load control within minimal board space.
Replacement Considerations
BSS138AKQB-QZ
FAQ
What is the package type for the BSS138AKRA-Q?
The BSS138AKRA-Q is housed in a DFN1412-6 (SOT1268) plastic, thin small outline package with no leads.
Is the BSS138AKRA-Q suitable for automotive applications?
Yes, the device is qualified in accordance with the Automotive Electronics Council standard Q101.
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy is 6.6 mJ under specified conditions.
