BSS138AKW-QX

$0.17

Description：MOS DISCRETES
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:67dd13ece72f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOS DISCRETES
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BSS138AKW-QX

Overview

The Nexperia BSS138AKW-Q is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 60 V drain-source voltage range and supports a continuous drain current of 220 mA at 25 °C. The device features a low on-state resistance of 3 Ω maximum at VGS = 10 V. It is housed in a compact SOT323 (SC-70) surface-mounted package with three leads. The component is qualified to AEC-Q101 standards and supports an extended junction temperature range up to 175 °C.

Feature Summary

Logic-level compatible for direct interface with standard logic outputs
Extended thermal capability supporting junction temperatures up to 175 °C
Integrated ElectroStatic Discharge protection mechanisms
Automotive Electronics Council qualification ensuring reliability

Applications

Relay driver circuits
High-speed line drivers
Low-side load switching
General purpose switching applications

Procurement Notes

Verify the specific ordering suffix matches the required package variant and manufacturing site code. Confirm that the AEC-Q101 qualification status aligns with automotive project requirements. Ensure design parameters remain within the absolute maximum ratings defined in the datasheet to prevent permanent device damage during operation.

Selection Notes

Select this component when a small footprint is required alongside high switching speeds. The low threshold voltage facilitates efficient drive from low-voltage logic sources. Verify thermal management strategies account for the specified power dissipation limits across the intended operating ambient temperature range.

Part Context

This device belongs to Nexperia's BSS138AK series of N-channel Trench MOSFETs. It shares core electrical characteristics with variants like the BSS138AKA but utilizes the distinct SOT323 plastic surface-mounted package. The series is designed for applications demanding miniaturization without compromising switching performance or thermal robustness.