BSS138BKDW-TPQ2

BSS138BKDW-TPQ2

$0.09
  • Description:MOSFET 2N-CH 50V 0.22A SOT363
  • Series:-

SKU:4dd2f58a3d9a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.22A SOT363
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:220mA
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:1.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:22.8pF @ 25V
  • Power - Max:350mW
  • Operating Temperature:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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BSS138BKDW-TPQ2

Overview

The BSS138BKDW-TPQ2 is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes high-density cell design to achieve extremely low on-resistance. The device operates within a drain-source voltage range of 50V and supports a continuous drain current of 0.22A. Key electrical parameters include a gate threshold voltage of 0.8V to 1.45V, an on-resistance of 1.6Ω at VGS=2.5V/ID=0.1A, and a forward transconductance of 100mS. It features ESD protection up to 2KV (HBM) and complies with RoHS standards.

Feature Summary

  • Dual N-channel configuration in a compact SOT-363 package
  • High-density cell design for minimized on-resistance
  • ESD protection rated up to 2KV under Human Body Model conditions
  • Halogen-free construction meeting UL 94 V-0 flammability ratings

Applications

  • Load switching applications requiring low on-resistance
  • Power management circuits in portable devices
  • General-purpose switching in consumer electronics

Procurement Notes

Verify the component authenticity through authorized MCC distributors or direct manufacturer channels. Ensure the ordering suffix matches the specific tape-and-reel packaging requirements. Confirm compliance with RoHS directives and halogen-free specifications prior to integration into production lines.

Selection Notes

Select this component for designs requiring dual N-channel functionality in a small footprint. Consider the 50V breakdown voltage and 0.22A current rating for appropriate load handling. Evaluate the thermal resistance and operating temperature range to ensure suitability for the intended environmental conditions.

Part Context

This part belongs to the BSS138 series of MOSFETs from Micro Commercial Components. It represents a dual-channel variant designed for space-constrained applications. The series is characterized by silicon technology and enhancement mode operation, suitable for general-purpose switching tasks.

Replacement Considerations

BSS138AKDWHE3-TP

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